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Abe, Shinichiro
Nihon Genshiryoku Gakkai-Shi ATOMO
, 65(5), p.326 - 330, 2023/05
Non-destructive faults (the so-called soft errors) in microelectronics caused by environmental radiation such as neutrons and muons have been recognized as a serious reliability problem. The number of microelectronics requiring high reliability increases with the growth of the information society. Therefore, it is not realistic to evaluate the soft error rate (SER) of all microelectronics by measurement. Moreover, the evaluation of SER in the pre-manufacturing stage is sometimes required. As a result, the evaluation of SER by simulation become more important. We have developed the soft error simulation method with PHITS code. We have also simulated the neutron- and muon-induced soft errors. These results will be reported in the journal of the Atomic Energy Society of Japan (AESJ) as the explanatory article.
Liao, W.*; Ito, Kojiro*; Abe, Shinichiro; Mitsuyama, Yukio*; Hashimoto, Masanori*
IEEE Transactions on Nuclear Science, 68(6), p.1228 - 1234, 2021/06
Times Cited Count：2 Percentile：30.55(Engineering, Electrical & Electronic)Secondary cosmic-ray neutron-induced single event upset (SEU) is a cause of soft errors on micro electronic devices. Multiple cell upsets (MCUs) are particularly serious problems since it is difficult to recover MCUs. In this study, we have performed irradiation tests of neutrons on 65-nm bulk SRAM at the national metrology institute of Japan (NMIJ) in Advanced Industrial Science and Technology (AIST) and measured SEU cross sections and MCU cross sections to investigate the effect on neutrons with the energies below 10 MeV on soft errors. It was found that SEU cross sections change drastically around 6 MeV. The proportion of MCU to total events does not change very much over the wide range of neutron energy. We also analyzed the total soft error rate (SER) of SEU and MCU by folding the neutron energy-dependent cross section and the flux spectra of the terrestrial neutron at New York and Tokyo. The calculated result indicates that the SER originating from the low-energy neutrons below 10 MeV is mostly negligible in the terrestrial environment.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Tampo, Motonobu*; Takeshita, Soshi*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 67(7), p.1566 - 1572, 2020/07
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Muon-induced single event upset (SEU) is predicted to increase with technology scaling. The angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk SRAM and FDSOI SRAM at two angles of incidence: 0 degree (vertical) and 45 degree (tilted). The tilted incidence drifts the muon energy peak to a higher energy. Moreover, the SEU characteristics (i.e., such as the voltage dependences of the SEU cross sections and multiple cells upset patterns) between the vertical and tilted incidences are similar.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Abe, Shinichiro; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 66(7), p.1390 - 1397, 2019/07
Times Cited Count：13 Percentile：81.94(Engineering, Electrical & Electronic)Multiple-cell upset (MCU) in static random access memory (SRAM) is a major concern in radiation effects on microelectronic devices since it can spoil error correcting codes. Neutron-induced MCUs have been characterized for terrestrial environment. On the other hand, negative muon-induced MCUs were recently reported. Neutron- and negative muon-induced MCUs are both caused by secondary ions, and hence, they are expected to have some similarity. In this paper, we compare negative muon- and neutron-induced MCUs in 65-nm bulk SRAMs at the irradiation experiments using spallation and quasi-monoenergetic neutrons and monoenergetic negative muons. The measurement results show that the dependencies of MCU event cross section on operating voltage are almost identical. The Monte Carlo simulation is conducted to investigate the deposited charge. The distributions of deposited charge obtained by the simulation are consistent with the above-mentioned experimental observations.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Hamada, Koji*; Tampo, Motonobu*; et al.
IEEE Transactions on Nuclear Science, 65(8), p.1734 - 1741, 2018/08
Times Cited Count：15 Percentile：81.29(Engineering, Electrical & Electronic)Soft error induced by secondary cosmic-ray muon is concerned since susceptibility of semiconductor device to soft error increases with the scaling of technology. In this study, we have performed irradiation tests of muons on 65-nm bulk CMOS SRAM in the Japan Proton Accelerator Research Complex (J-PARC) and measured soft error rate (SER) to investigate mechanism of muon-induced soft errors. It was found that SER by negative muon increases above 0.5 V supply voltage, although SER by positive muon increases monotonically as the supply voltage lowers. SER by negative muon also increases with forward body bias. In addition, negative muon causes large multiple cell upset (MCU) of more than 20 bits and the ratio of MCU events to all the events is 66% at 1.2V supply voltage. These tendencies indicate that parasitic bipolar action (PBA) is highly possible to contribute to SER by negative muon. Experimental data are analyzed by PHITS. It was found that negative muon can deposit larger charge than positive muon, and such events that can deposit large charge may trigger PBA.
Abe, Shinichiro; Sato, Tatsuhiko
Journal of Nuclear Science and Technology, 53(3), p.451 - 458, 2016/03
Times Cited Count：10 Percentile：64.39(Nuclear Science & Technology)Secondary cosmic-ray neutron-induced soft errors have been recognized as a serious problem affecting the reliability of microelectronic devices. Our developed Multi-scale Monte Carlo simulator called PHYSERD is a reliable code for analysis of soft error. However, PHYSERD takes long computational time to calculate processes of collecting charges because event-by-event technology computer-aided design (TCAD) simulation is time consuming. In this study, the multiple sensitive volume (MSV) model is adopted to estimate collected charge. Secondary cosmic-ray neutron-induced soft errors in an NMOSFET are analyzed based on the MSV model using PHITS. The results are compared with those obtained by PHYSERD based on event-by-event TCAD simulation and by single sensitive volume (SSV) model using PHITS. It is found that PHITS+MSV provides approximate SERs in a shorter time than PHYSERD. Furthermore, PHITS+MSV reproduces SERs and collected charges more accurately than PHITS+SSV by considering the spatial dependence of the charge collection efficiencies.
Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10
no abstracts in English
Mori, Hidenobu; Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Ito, Hisayoshi
JAERI-Review 2002-035, TIARA Annual Report 2001, p.14 - 16, 2002/11
no abstracts in English
Makihara, Akiko*; Shindo, Hiroyuki*; Nemoto, Norio*; Kuboyama, Satoshi*; Matsuda, Sumio*; Oshima, Takeshi; Hirao, Toshio; Ito, Hisayoshi; Buchner, S.*; Campbell, A. B.*
Proceedings of 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.103 - 107, 2000/00
no abstracts in English
Nemoto, N.*; Shindo, Hiroyuki*; *; Kuboyama, Satoshi*; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Matsuda, Sumio*
Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.154 - 159, 1998/00
no abstracts in English
Kamiya, Tomihiro; *; Minehara, Eisuke; Tanaka, Ryuichi; *; *; *
Proceedings of the International Conference on Evolution in Beam Applications, p.286 - 291, 1992/05
no abstracts in English
Abe, Shinichiro; Sato, Tatsuhiko; Ogawa, Tatsuhiko
no journal, ,
In this study, we have analyzed the impact of the new version of event generator mode (e-mode ver. 2) implemented in PHITS code on evaluations of neutron-induced single event upset (SEU) for semiconductor devices. Single event effect is one of the radiation effects on the semiconductor device. The data stored in the device are flipped by the noise charge created by radiation (so-called SEU), and temporary malfunction is happened in the microelectronic device (so-called soft error). Since neutrons have no charge, they create the noise charge via a nuclear reaction. Therefore the accuracy of the nuclear reaction model is important for validating SEU cross section by simulation. The improvement of e-mode ver. 2 has been validated by comparing the product cross sections of secondary ions with those stored in the JENDL-4.0. From the comparison of SEU cross sections by e-mode ver. 2 with those obtained by e-mode ver. 1 (existing version), it is found that the improvement of e-mode have an impact on the SEU analysis.
